IR2135 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 28SOIC
| Part | Gate Type | High Side Voltage - Max (Bootstrap) [Max] | Input Type | Package / Case [custom] | Package / Case | Package / Case [custom] | Supplier Device Package | Voltage - Supply [Max] | Voltage - Supply [Min] | Number of Drivers | Mounting Type | Channel Type | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Operating Temperature | Driven Configuration | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Logic Voltage - VIL, VIH | Supplier Device Package | Supplier Device Package [x] | Supplier Device Package [y] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 600 V | Inverting | 0.295 " | 28-SOIC | 7.5 mm | 28-SOIC | 20 V | 10 VDC | 6 | Surface Mount | 3-Phase | 250 mA | 500 mA | 125 ¯C | Half-Bridge | 90 ns | 40 ns | 0.8 V 2.2 V | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 600 V | Inverting | 0.295 " | 28-SOIC | 7.5 mm | 28-SOIC | 20 V | 10 VDC | 6 | Surface Mount | 3-Phase | 250 mA | 500 mA | 125 ¯C | Half-Bridge | 90 ns | 40 ns | 0.8 V 2.2 V | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 600 V | Inverting | 44-LCC (J-Lead) 32 Leads | 44-PLCC | 20 V | 10 VDC | 6 | Surface Mount | 3-Phase | 250 mA | 500 mA | 125 ¯C | Half-Bridge | 90 ns | 40 ns | 0.8 V 2.2 V | 32 | 16.58 | 16.58 | ||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 600 V | Inverting | 44-LCC (J-Lead) 32 Leads | 44-PLCC | 20 V | 10 VDC | 6 | Surface Mount | 3-Phase | 250 mA | 500 mA | 125 ¯C | Half-Bridge | 90 ns | 40 ns | 0.8 V 2.2 V | 32 | 16.58 | 16.58 | ||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 600 V | Inverting | 44-LCC (J-Lead) 32 Leads | 44-PLCC | 20 V | 10 VDC | 6 | Surface Mount | 3-Phase | 250 mA | 500 mA | 125 ¯C | Half-Bridge | 90 ns | 40 ns | 0.8 V 2.2 V | 32 | 16.58 | 16.58 | ||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 600 V | Inverting | 28-DIP | 28-PDIP | 20 V | 10 VDC | 6 | Through Hole | 3-Phase | 250 mA | 500 mA | 125 ¯C | Half-Bridge | 90 ns | 40 ns | 0.8 V 2.2 V | 15.24 mm | 0.6 in | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 600 V | Inverting | 44-LCC (J-Lead) 32 Leads | 44-PLCC | 20 V | 10 VDC | 6 | Surface Mount | 3-Phase | 250 mA | 500 mA | 125 ¯C | Half-Bridge | 90 ns | 40 ns | 0.8 V 2.2 V | 32 | 16.58 | 16.58 | ||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 600 V | Inverting | 0.295 " | 28-SOIC | 7.5 mm | 28-SOIC | 20 V | 10 VDC | 6 | Surface Mount | 3-Phase | 250 mA | 500 mA | 125 ¯C | Half-Bridge | 90 ns | 40 ns | 0.8 V 2.2 V | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 600 V | Inverting | 0.295 " | 28-SOIC | 7.5 mm | 28-SOIC | 20 V | 10 VDC | 6 | Surface Mount | 3-Phase | 250 mA | 500 mA | 125 ¯C | Half-Bridge | 90 ns | 40 ns | 0.8 V 2.2 V | |||||
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 600 V | Inverting | 44-LCC (J-Lead) 32 Leads | 44-PLCC | 20 V | 10 VDC | 6 | Surface Mount | 3-Phase | 250 mA | 500 mA | 125 ¯C | Half-Bridge | 90 ns | 40 ns | 0.8 V 2.2 V | 32 | 16.58 | 16.58 |