20 V, dual P-channel Trench MOSFET
20 V, dual P-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Qualification | Supplier Device Package | Configuration | Vgs(th) (Max) @ Id | Grade | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Technology | Drain to Source Voltage (Vdss) | Power - Max [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 3.6 A 9.3 A | AEC-Q101 | 6-HUSON (2x2) | 2 P-Channel (Dual) | 1 V | Automotive | 150 °C | -55 °C | 6-UFDFN Exposed Pad | Surface Mount | 13 nC | MOSFET (Metal Oxide) | 20 V | 490 mW | 785 pF | 66 mOhm |