BQ4013 Series

Catalog

IC NVSRAM 1MBIT PAR 32DIP MODULE

Part	Technology	Memory Interface	Write Cycle Time - Word, Page	Operating Temperature [Max]	Operating Temperature [Min]	Memory Type	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Package / Case	Package / Case [y]	Package / Case [x]	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Format	Mounting Type	Memory Size	Memory Organization	Access Time
Texas Instruments BQ4013YMA-120	NVSRAM (Non-Volatile SRAM)	Parallel	120 ns	70 °C	0 °C	Non-Volatile	18.42	32-DIP Module	42.8	32-DIP Module	15.49 mm	0.61 in	4.5 V	5.5 V	NVSRAM	Through Hole	1 Mbit	128K x 8	120 ns
Texas Instruments BQ4013LYMA-70N	NVSRAM (Non-Volatile SRAM)	Parallel		85 °C	-40 °C	Non-Volatile	18.42	32-DIP Module	42.8	32-DIP Module	15.49 mm	0.61 in	3 V	3.6 V	NVSRAM	Through Hole	1 Mbit	128K x 8	70 ns
Texas Instruments BQ4013YMA-85	NVSRAM (Non-Volatile SRAM)	Parallel	85 ns	70 °C	0 °C	Non-Volatile	18.42	32-DIP Module	42.8	32-DIP Module	15.49 mm	0.61 in	4.5 V	5.5 V	NVSRAM	Through Hole	1 Mbit	128K x 8	85 ns
Texas Instruments BQ4013YMA-70N	NVSRAM (Non-Volatile SRAM)	Parallel		85 °C	-40 °C	Non-Volatile	18.42	32-DIP Module	42.8	32-DIP Module	15.49 mm	0.61 in	4.5 V	5.5 V	NVSRAM	Through Hole	1 Mbit	128K x 8	70 ns
Texas Instruments BQ4013YMA-70	NVSRAM (Non-Volatile SRAM)	Parallel		70 °C	0 °C	Non-Volatile	18.42	32-DIP Module	42.8	32-DIP Module	15.49 mm	0.61 in	4.5 V	5.5 V	NVSRAM	Through Hole	1 Mbit	128K x 8	70 ns
Texas Instruments BQ4013YMA-85N	NVSRAM (Non-Volatile SRAM)	Parallel	85 ns	85 °C	-40 °C	Non-Volatile	18.42	32-DIP Module	42.8	32-DIP Module	15.49 mm	0.61 in	4.5 V	5.5 V	NVSRAM	Through Hole	1 Mbit	128K x 8	85 ns