Catalog
30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Qualification | Technology | Package / Case | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Grade | Drain to Source Voltage (Vdss) | Mounting Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 175 °C | -55 °C | DFN2020MD-6 | AEC-Q101 | MOSFET (Metal Oxide) | 6-UDFN Exposed Pad | 38 mOhm | 5.5 A 17 A | 2 W 19 W | 266 pF | 2.5 V | 4.5 V 10 V | Automotive | 30 V | Surface Mount | 20 V | 8 nC | N-Channel |