Catalog
40 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
40 V, N-channel Trench MOSFET
40 V, N-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Technology | Vgs (Max) | FET Type | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Qualification | Current - Continuous Drain (Id) @ 25°C | Grade | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 5 nC | MOSFET (Metal Oxide) | 20 V | N-Channel | 7.5 W 615 mW | 40 V | 75 mOhm | Surface Mount | TO-236AB | 175 °C | -55 °C | SC-59 SOT-23-3 TO-236-3 | AEC-Q101 | 3 A | Automotive | 180 pF | 2.5 V | 4.5 V 10 V |