Catalog
40 V, 10 A PNP high power bipolar transistor
Description
AI
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
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40 V, 10 A PNP high power bipolar transistor
40 V, 10 A PNP high power bipolar transistor
| Part | Package / Case | Grade | Operating Temperature | Vce Saturation (Max) @ Ib, Ic | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Frequency - Transition | Qualification | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | SC-100 SOT-669 | Automotive | 175 °C | 800 mV | 1.3 W | 100 nA | 97 MHz | AEC-Q100 | PNP | 40 V | 240 | Surface Mount | LFPAK56 Power-SO8 |