IRS2003 Series
Manufacturer: INFINEON
Beta
⌘K
GATE DRIVERS HALF BRDG DRVR W/ HI&LW SIDE OUTPT
| Part | Gate Type | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Channel Type | Number of Drivers | Operating Temperature [Min] | Operating Temperature [Max] | Voltage - Supply [Max] | Voltage - Supply [Min] | Logic Voltage - VIL, VIH | Driven Configuration | High Side Voltage - Max (Bootstrap) [Max] | Mounting Type | Package / Case | Input Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Supplier Device Package | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 600 mA | 290 mA | Independent | 2 | -40 °C | 150 °C | 20 V | 10 VDC | 0.8 V 2.5 V | Half-Bridge | 200 V | Through Hole | 8-DIP (0.300" 7.62mm) | Inverting Non-Inverting | 70 ns | 35 ns | 8-PDIP | ||
 INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | 600 mA | 290 mA | Independent | 2 | -40 °C | 150 °C | 20 V | 10 VDC | 0.8 V 2.5 V | Half-Bridge | 200 V | Surface Mount | 8-SOIC | Inverting Non-Inverting | 70 ns | 35 ns | 8-SOIC | 0.154 in | 3.9 mm |
INFINEON | IGBT MOSFET (N-Channel) | 600 mA | 290 mA | Independent | 2 | -40 °C | 150 °C | 20 V | 10 VDC | 0.8 V 2.5 V | Half-Bridge | 200 V | Through Hole | 8-DIP (0.300" 7.62mm) | Inverting Non-Inverting | 70 ns | 35 ns | 8-PDIP |