SI8404 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 8V 12.2A 4MICROFOOT
| Part | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Supplier Device Package | Vgs(th) (Max) @ Id | Technology | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 5 V | 33 nC | -55 °C | 150 °C | 1950 pF | Surface Mount | 4-Microfoot | 1 V | MOSFET (Metal Oxide) | 31 mOhm | 12.2 A | 4-XFBGA CSPBGA | 2.78 W 6.25 W | 1.8 V 4.5 V | 8 V | N-Channel |