High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.82 Ω@10V, DPAK, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.82 Ω@10V, DPAK, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.82 Ω@10V, DPAK, DTMOSⅣ
| Part | Rds On (Max) @ Id, Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Operating Temperature | Vgs(th) (Max) @ Id | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Power Dissipation (Max) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 820 mOhm | N-Channel | 6.2 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 150 °C | 3.7 V | MOSFET (Metal Oxide) | 390 pF | 30 V | 600 V | 12 nC | 10 V | Surface Mount | 60 W | DPAK |