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20 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Technology | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Qualification | Current - Continuous Drain (Id) @ 25°C | FET Type | Package / Case | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Power Dissipation (Max) | Power Dissipation (Max) | Grade | Vgs (Max) [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | TO-236AB | 22.1 nC | AEC-Q101 | 4.5 A | P-Channel | SC-59 SOT-23-3 TO-236-3 | 950 mV | 32 mOhm | 150 °C | -55 °C | 1820 pF | Surface Mount | 1.8 V | 4.5 V | 4.15 W | 490 mW | Automotive | 8 V | 20 V |