IQE006 Series
Manufacturer: INFINEON
Beta
⌘K
OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3X3.3 SOURCE-DOWN PACKAGE; 0.65 MOHM;
| Part | Power Dissipation (Max) | Package / Case | Vgs(th) (Max) @ Id | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 2.1 W 89 W | 8-PowerTDFN | 2 V | MOSFET (Metal Oxide) | 82.1 nC | 25 V | 41 A 298 A | 16 V | Surface Mount | 0.65 mOhm | PG-TTFN-9-1 | 150 °C | -55 °C | 5453 pF | N-Channel | |
 INFINEON | 2.1 W 89 W | 8-PowerTDFN | 2 V | MOSFET (Metal Oxide) | 82.1 nC | 25 V | 41 A 298 A | 16 V | Surface Mount | 0.65 mOhm | PG-TSON-8-4 | 150 °C | -55 °C | 5453 pF | N-Channel | 4.5 V 10 V |