XK1R9F10 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 100V 160A TO220SM
| Part | Qualification | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Technology | Grade | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | FET Type | Package / Case | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Mounting Type | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | AEC-Q101 | 6 V 10 V | 100 V | MOSFET (Metal Oxide) | Automotive | 3.5 V | 11500 pF | TO-220SM(W) | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 160 A | 184 nC | 20 V | Surface Mount | 375 W | 1.92 mOhm | 175 °C |