CSD18540Q5B Series

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm

Catalog

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm

Part	Power Dissipation (Max)	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Texas Instruments CSD18540Q5BT	3.1 W 195 W	Surface Mount	MOSFET (Metal Oxide)	2.2 mOhm	N-Channel	-55 °C	150 °C	100 A	8-PowerTDFN	8-VSON-CLIP (5x6)	20 V	4.5 V 10 V	4230 pF	53 nC	60 V	2.3 V

Catalog

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm

Key Features

• Ultra-Low Qgand QgdLow-Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageUltra-Low Qgand QgdLow-Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

This 1.8-mΩ, 60-V NexFET™ power MOSFET is designed to minimize losses in power conversion applications with a SON 5-mm × 6-mm package. This 1.8-mΩ, 60-V NexFET™ power MOSFET is designed to minimize losses in power conversion applications with a SON 5-mm × 6-mm package.