SI4880 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 30V 13A 8-SOIC
| Part | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Technology | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Rds On (Max) @ Id, Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1.8 V | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | 13 A | 25 nC | 25 V | 8.5 mOhm | Surface Mount | 30 V | 8-SOIC | 4.5 V 10 V | 2.5 W |