APT50GT120 Series
Manufacturer: Microsemi Corporation
Beta
⌘K
IGBT NPT 1200V 106A
| Part | Current - Collector (Ic) (Max) [Max] | Td (on/off) @ 25°C | Gate Charge | Switching Energy | Power - Max [Max] | Mounting Type | IGBT Type | Vce(on) (Max) @ Vge, Ic [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Test Condition | Current - Collector Pulsed (Icm) | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Microsemi Corporation | 106 A | 23 ns 215 ns | 240 nC | 1910 µJ 3585 µJ | 694 W | Through Hole | NPT | 3.7 V | 1200 V | 4.7 Ohm 15 V 50 A 800 V | 150 A | 150 °C | -55 °C | TO-247-3 Variant |