IRFL210 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 200V 960MA SOT223
| Part | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Technology | FET Type | Package / Case | Drain to Source Voltage (Vdss) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 8.2 nC | Surface Mount | 960 mA | 140 pF | 20 V | 4 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | N-Channel | TO-261-4 TO-261AA | 200 V | SOT-223 | 10 V | 2 W 3.1 W | 1.5 Ohm |
Vishay General Semiconductor - Diodes Division | 8.2 nC | Surface Mount | 960 mA | 140 pF | 20 V | 4 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | N-Channel | TO-261-4 TO-261AA | 200 V | SOT-223 | 10 V | 2 W 3.1 W | 1.5 Ohm |