2SJ304 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET P-CH 60V 14A TO220NIS
| Part | Vgs(th) (Max) @ Id | Technology | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Rds On (Max) @ Id, Vgs | Operating Temperature | FET Type | Drain to Source Voltage (Vdss) | Package / Case | Vgs (Max) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2 V | MOSFET (Metal Oxide) | TO-220NIS | 1200 pF | 14 A | Through Hole | 4 V | 10 V | 120 mOhm | 150 °C | P-Channel | 60 V | TO-220-3 Full Pack | 20 V | 40 W | 45 nC |