LM74912-Q1 Series

Automotive ideal diode with integrated over-voltage and short circuit protection w/ fault output

Catalog

Automotive ideal diode with integrated over-voltage and short circuit protection w/ fault output

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Output (Max) [Max]	Applications	Ratio - Input:Output [custom]	Type	Package / Case	Current - Supply	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Supplier Device Package	Internal Switch(s)	FET Type
Texas Instruments LM74912QRGERQ1	-40 °C	125 °C	2.6 A	Redundant Power Supplies	1:1	N+1 ORing Controller	24-VFQFN Exposed Pad	615 µA	65 V	3 V	Surface Mount Wettable Flank	24-VQFN (4x4)		N-Channel

Catalog

Automotive ideal diode with integrated over-voltage and short circuit protection w/ fault output

Key Features

• AEC-Q100 qualified for automotive applicationsDevice temperature grade 1: –40°C to +125°C ambient operating temperature rangeFunctional Safety-CapableDocumentation available to aid functional safety system design3-V to 65-V input rangeReverse input protection down to –65 VDrives external back-to-back N-channel MOSFETs in common drain configurationIdeal diode operation with 10.5-mV A to C forward voltage drop regulationLow reverse detection threshold (–10.5 mV) with fast response (0.5 µs)20-mA peak gate (DGATE) turn-on current2.6-A peak DGATE turn-off currentAdjustable overvoltage and undervoltage protectionOutput short circuit protection with MOSFET latched off stateUltra low power mode with 2.5-µA shutdown current (EN=Low)SLEEP mode with 6-µA current (EN=High, SLEEP=Low)Meets automotive ISO7637 transient requirements with a suitable transient voltage suppressor (TVS) diodeAvailable in 4 mm × 4 mm 24-pin VQFN packageAEC-Q100 qualified for automotive applicationsDevice temperature grade 1: –40°C to +125°C ambient operating temperature rangeFunctional Safety-CapableDocumentation available to aid functional safety system design3-V to 65-V input rangeReverse input protection down to –65 VDrives external back-to-back N-channel MOSFETs in common drain configurationIdeal diode operation with 10.5-mV A to C forward voltage drop regulationLow reverse detection threshold (–10.5 mV) with fast response (0.5 µs)20-mA peak gate (DGATE) turn-on current2.6-A peak DGATE turn-off currentAdjustable overvoltage and undervoltage protectionOutput short circuit protection with MOSFET latched off stateUltra low power mode with 2.5-µA shutdown current (EN=Low)SLEEP mode with 6-µA current (EN=High, SLEEP=Low)Meets automotive ISO7637 transient requirements with a suitable transient voltage suppressor (TVS) diodeAvailable in 4 mm × 4 mm 24-pin VQFN package

Description

The LM74912-Q1 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control with overvoltage, undervoltage and output short circuit protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) in case of overcurrent and overvoltage events using HGATE control. The device has integrated current sense amplifier which provides external MOSFET VDS sense based short circuit protection with an adjustable current limit. When short circuit condition is detected on the output then device latches off the load disconnect MOSFET. The device features an adjustable overvoltage cut-off protection feature. The device features a SLEEP mode which enables ultra low quiescent current consumption (6 µA) and at the same time providing refresh current to the always ON loads when vehicle is in the parking state. The LM74912-Q1 has a maximum voltage rating of 65 V. The LM74912-Q1 ideal diode controller drives and controls external back to back N-channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control with overvoltage, undervoltage and output short circuit protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) in case of overcurrent and overvoltage events using HGATE control. The device has integrated current sense amplifier which provides external MOSFET VDS sense based short circuit protection with an adjustable current limit. When short circuit condition is detected on the output then device latches off the load disconnect MOSFET. The device features an adjustable overvoltage cut-off protection feature. The device features a SLEEP mode which enables ultra low quiescent current consumption (6 µA) and at the same time providing refresh current to the always ON loads when vehicle is in the parking state. The LM74912-Q1 has a maximum voltage rating of 65 V.