SIRA90 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 100A PPAK SO-8
| Part | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 0.8 mOhm | PowerPAK® SO-8 | MOSFET (Metal Oxide) | 10180 pF | PowerPAK® SO-8 | 153 nC | 104 W | N-Channel | -55 °C | 150 °C | Surface Mount | 4.5 V 10 V | 30 V | 100 A | -16 V 20 V | 2 V |