GB01SLT06 Series
Manufacturer: GeneSiC Semiconductor
DIODE SIL CARB 650V 1A DO214AA
| Part | Current - Average Rectified (Io) | Mounting Type | Speed | Package / Case | Reverse Recovery Time (trr) | Technology | Voltage - Forward (Vf) (Max) @ If [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1 A | Surface Mount | 500 mA | DO-214AA SMB | 0 ns | SiC (Silicon Carbide) Schottky | 2 V | 175 ░C | -55 °C | 650 V | 76 pF | 10 µA | DO-214AA |