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40 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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40 V, N-channel Trench MOSFET
40 V, N-channel Trench MOSFET
| Part | Vgs(th) (Max) @ Id | Package / Case | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Grade | Qualification | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Supplier Device Package | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | 4 V | 6-UDFN Exposed Pad | 15 W | 40 V | Automotive | AEC-Q101 | 20 V | 460 pF | -55 °C | 175 ░C | Surface Mount | 8 A | 13 nC | MOSFET (Metal Oxide) | DFN2020MD-6 | 25 mOhm | 10 V | N-Channel |