SIHF520 Series

Catalog

MOSFET N-CH 100V 9.2A D2PAK

Part	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Vgs (Max)	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIHF520STRL-GE3	360 pF	10 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	N-Channel	MOSFET (Metal Oxide)	9.2 A	-55 °C	175 ░C	16 nC	3.7 W 60 W	TO-263 (D2PAK)	4 V	100 V	270 mOhm
Vishay General Semiconductor - Diodes Division SIHF520STRR-GE3	360 pF	10 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	N-Channel	MOSFET (Metal Oxide)	9.2 A	-55 °C	175 ░C	16 nC	3.7 W 60 W	TO-263 (D2PAK)	4 V	100 V	270 mOhm