TP65H150 Series

Catalog

GAN FET N-CH 650V PQFN

Part	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Renesas Electronics Corporation TP65H150G4LSG	20 V	3-PQFN (8x8)	52 W	4.8 V	3-PowerTDFN	10 V	650 V	GaNFET (Gallium Nitride)	150 °C	-55 °C	N-Channel	13 A	180 mOhm	Surface Mount	8 nC	598 pF
Renesas Electronics Corporation TP65H150G4LSG	20 V	3-PQFN (8x8)	52 W	4.8 V	3-PowerTDFN	10 V	650 V	GaNFET (Gallium Nitride)	150 °C	-55 °C	N-Channel	13 A	180 mOhm	Surface Mount	8 nC	598 pF