SSM6N58 Series

Catalog

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 30 V, 4.0 A, 0.084 Ω@4.5V, SOT-1118(UDFN6)

Part	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	FET Feature	FET Feature	Operating Temperature	Technology
Toshiba Semiconductor and Storage SSM6N58NU,LF	2 N-Channel (Dual)	129 pF	Surface Mount	1 V	30 V	84 mOhm	4 A	6-UDFN (2x2)	1.8 nC	1 W	1.8 V	Logic Level Gate	150 °C	MOSFET (Metal Oxide)