IRF731 Series
Manufacturer: INFINEON
MOSFET, P-CH, 20V, 5.3A, SOIC ROHS COMPLIANT: YES
| Part | Current - Continuous Drain (Id) @ 25°C | FET Feature | Mounting Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power - Max [Max] | Configuration | Rds On (Max) @ Id, Vgs | Technology | Package / Case | Package / Case | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 5.3 A | Logic Level Gate | Surface Mount | 8-SO | 29 nC | 20 V | 700 mV | 2 W | 2 P-Channel (Dual) | 58 mOhm | MOSFET (Metal Oxide) | 0.154 in | 8-SOIC | 3.9 mm | 150 °C | -55 °C | |||
INFINEON | Surface Mount | 8-SO | 33 nC | 30 V | 1 V | 2 W | N and P-Channel | 29 mOhm | MOSFET (Metal Oxide) | 0.154 in | 8-SOIC | 3.9 mm | 150 °C | -55 °C | 650 pF | ||||
INFINEON | 6.6 A | Logic Level Gate | Surface Mount | 8-SO | 20 V | 700 mV | 2 W | 2 N-Channel (Dual) | 29 mOhm | MOSFET (Metal Oxide) | 0.154 in | 8-SOIC | 3.9 mm | 150 °C | -55 °C | 900 pF | 27 nC | ||
INFINEON | 4.9 A | Logic Level Gate | Surface Mount | 8-SO | 34 nC | 30 V | 1 V | 2 W | 2 P-Channel (Dual) | 58 mOhm | MOSFET (Metal Oxide) | 0.154 in | 8-SOIC | 3.9 mm | 150 °C | -55 °C | 710 pF | ||
INFINEON | 5.3 A 6.6 A | Logic Level Gate | Surface Mount | 8-SO | 20 V | 700 mV | 2 W | N and P-Channel | 29 mOhm | MOSFET (Metal Oxide) | 0.154 in | 8-SOIC | 3.9 mm | 150 °C | -55 °C | 900 pF | 27 nC | ||
INFINEON | 6.6 A | Logic Level Gate | Surface Mount | 8-SO | 20 V | 700 mV | 2 W | 2 N-Channel (Dual) | 29 mOhm | MOSFET (Metal Oxide) | 0.154 in | 8-SOIC | 3.9 mm | 150 °C | -55 °C | 900 pF | 27 nC | ||
INFINEON | 6.6 A | Logic Level Gate | Surface Mount | 8-SO | 20 V | 700 mV | 2 W | 2 N-Channel (Dual) | 29 mOhm | MOSFET (Metal Oxide) | 0.154 in | 8-SOIC | 3.9 mm | 150 °C | -55 °C | 900 pF | 27 nC | ||
INFINEON | 6.5 A | Surface Mount | 8-SO | 33 nC | 30 V | 1 V | 2 W | 2 N-Channel (Dual) | 29 mOhm | MOSFET (Metal Oxide) | 0.154 in | 8-SOIC | 3.9 mm | 650 pF | |||||
INFINEON | 4.9 A | Logic Level Gate | Surface Mount | 8-SO | 34 nC | 30 V | 1 V | 2 W | 2 P-Channel (Dual) | 58 mOhm | MOSFET (Metal Oxide) | 0.154 in | 8-SOIC | 3.9 mm | 150 °C | -55 °C | 710 pF | ||
INFINEON | 4.9 A | Logic Level Gate | Surface Mount | 8-SO | 34 nC | 30 V | 1 V | 2 W | 2 P-Channel (Dual) | 58 mOhm | MOSFET (Metal Oxide) | 0.154 in | 8-SOIC | 3.9 mm | 150 °C | -55 °C | 710 pF |