SSM3K309 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N-CH 20V 4.7A TSM
| Part | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Technology | Vgs (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Operating Temperature | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 4.7 A | 1.8 V 4 V | N-Channel | 20 V | 700 mW | MOSFET (Metal Oxide) | 12 V | TSM | 31 mOhm | 150 °C | SC-59 SOT-23-3 TO-236-3 | 1020 pF | Surface Mount |