BSG0811 Series
Manufacturer: INFINEON
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OPTIMOS™ 5 N+N DUAL POWER MOSFET 25 V ; POWER BLOCK 5X6 PACKAGE; 0.9 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE
| Part | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Configuration | Package / Case | Mounting Type | FET Feature | FET Feature | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 25 V | 2 V | 1100 pF | 2.5 W | 8.4 nC | 2 N-Channel (Dual) Asymmetrical | 8-PowerTDFN | Surface Mount | 4.5 V | Logic Level Gate | 3 mOhm | PG-TISON-8 | MOSFET (Metal Oxide) | 150 °C | -55 °C |