High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.29 Ω@10V, DPAK, DTMOSⅤ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.29 Ω@10V, DPAK, DTMOSⅤ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.29 Ω@10V, DPAK, DTMOSⅤ
| Part | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Package / Case | Mounting Type | Vgs (Max) | Operating Temperature | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 650 V | 730 pF | 4 V | 290 mOhm | DPAK | 11.5 A | 25 nC | N-Channel | 10 V | 100 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Surface Mount | 30 V | 150 °C | MOSFET (Metal Oxide) |