NVH040N65S3F Series

Single N-Channel Power MOSFET SUPERFET ® III, FRFET®, 650 V , 65 A, 40 mΩ, TO-247

Catalog

Single N-Channel Power MOSFET SUPERFET ® III, FRFET®, 650 V , 65 A, 40 mΩ, TO-247

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)
ON Semiconductor NVH040N65S3F	-55 °C	150 °C	40 mOhm	10 V	650 V	5875 pF	TO-247-3	MOSFET (Metal Oxide)	Through Hole	446 W	65 A	153 nC	TO-247-3	5 V	N-Channel	30 V

Catalog

Single N-Channel Power MOSFET SUPERFET ® III, FRFET®, 650 V , 65 A, 40 mΩ, TO-247

Key Features

• Best in Class body diode

• Internal Rg

• Lower RDS(on)/ Same Packages

• Lower FOM (RDS(ON) maxX Qg typ& RDS (ON) maxX EOSS

• Internal Zener / 650V BVdss

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability