FDMA008P20LZ Series

Single P-Channel PowerTrench® MOSFET -20V, -2.5A, 13mΩ

Catalog

Single P-Channel PowerTrench® MOSFET -20V, -2.5A, 13mΩ

Part	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDMA008P20LZ	6-PQFN (2x2)	6-PowerWDFN	1.5 V 4.5 V	39 nC	P-Channel	Surface Mount	-55 °C	150 °C	2.4 W	1.4 V	13 mOhm	20 V	12 A	8 V	MOSFET (Metal Oxide)	4383 pF

Catalog

Single P-Channel PowerTrench® MOSFET -20V, -2.5A, 13mΩ

Key Features

• Max rDS(on)= 13 mΩ at VGS= -4.5 V, ID= -2.5 A

• Max rDS(on)= 16 mΩ at VGS= -2.5 V, ID= -1.4 A

• Max rDS(on)= 20 mΩ at VGS= -1.8 V, ID= -1.0 A

• Max rDS(on)= 30 mΩ at VGS= -1.5 V, ID= -0.85 A

• Low Profile - 0.8 mm maximum in the new package MicroFET2x2 mm

• HBM ESD protection level > 1K V typical (Note 3)

• Free from halogenated compounds and antimony oxides

• RoHS Compliant

Description

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.