FDP085N10A Series

N-Channel PowerTrench® MOSFET 100V, 96A, 8.5mΩ

Catalog

N-Channel PowerTrench® MOSFET 100V, 96A, 8.5mΩ

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Supplier Device Package
ON Semiconductor FDP085N10A-F102	MOSFET (Metal Oxide)	96 A	10 V	100 V	-55 °C	175 ░C	Through Hole	TO-220-3	40 nC	188 W	2695 pF	4 V	8.5 mOhm	20 V	N-Channel	TO-220-3
ON Semiconductor FDP085N10A	MOSFET (Metal Oxide)	96 A	10 V	100 V	-55 °C	175 ░C	Through Hole	TO-220-3	40 nC	188 W	2695 pF	4 V	8.5 mOhm	20 V	N-Channel	TO-220-3

Catalog

N-Channel PowerTrench® MOSFET 100V, 96A, 8.5mΩ

Key Features

• RDS(on)= 7.35mΩ ( Typ.)@ VGS= 10V, ID= 96A

• Fast Switching Speed

• Low Gate Charge, QG= 31nC ( Typ.)

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.