XPN9R614MC Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -40 V, -40 A, 0.0096 Ω@10V, TSON ADVANCE(WF)
| Part | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | FET Type | Vgs(th) (Max) @ Id | Operating Temperature | Grade | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Qualification | Mounting Type | Supplier Device Package | Supplier Device Package [y] | Supplier Device Package [x] | Power Dissipation (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) [Max] | Vgs (Max) [Min] | Current - Continuous Drain (Id) @ 25°C | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 9.6 mOhm | 64 nC | P-Channel | 2.1 V | 175 °C | Automotive | 3000 pF | 8-PowerVDFN | AEC-Q101 | Surface Mount | 8-TSON Advance-WF | 3.1 | 3.1 | 840 mW | 100 W | 40 V | 4.5 V 10 V | 10 V | -20 V | 40 A | MOSFET (Metal Oxide) |