BYT52 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 100V 1.4A SOD57
| Part | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Package / Case | Mounting Type | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Avalanche | 100 V | 5 µA | 175 ░C | -55 C | 200 mA 500 ns | 1.4 A | 200 ns | Axial SOD-57 | Through Hole | SOD-57 | 1.3 V |
Vishay General Semiconductor - Diodes Division | Avalanche | 200 V | 5 µA | 175 ░C | -55 C | 200 mA 500 ns | 1.4 A | 200 ns | Axial SOD-57 | Through Hole | SOD-57 | 1.3 V |
Vishay General Semiconductor - Diodes Division | Avalanche | 50 V | 5 µA | 175 ░C | -55 C | 200 mA 500 ns | 1.4 A | 200 ns | Axial SOD-57 | Through Hole | SOD-57 | 1.3 V |
Vishay General Semiconductor - Diodes Division | Avalanche | 400 V | 5 µA | 175 ░C | -55 C | 200 mA 500 ns | 1.4 A | 200 ns | Axial SOD-57 | Through Hole | SOD-57 | 1.3 V |
Vishay General Semiconductor - Diodes Division | Avalanche | 800 V | 5 µA | 175 ░C | -55 C | 200 mA 500 ns | 1.4 A | 200 ns | Axial SOD-57 | Through Hole | SOD-57 | 1.3 V |
Vishay General Semiconductor - Diodes Division | Avalanche | 100 V | 5 µA | 175 ░C | -55 C | 200 mA 500 ns | 1.4 A | 200 ns | Axial SOD-57 | Through Hole | SOD-57 | 1.3 V |
Vishay General Semiconductor - Diodes Division | Avalanche | 800 V | 5 µA | 175 ░C | -55 C | 200 mA 500 ns | 1.4 A | 200 ns | Axial SOD-57 | Through Hole | SOD-57 | 1.3 V |