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20 V, P-channel Trench MOSFET
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P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Package / Case | FET Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Technology | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Vgs (Max) | Mounting Type | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 8-PowerVDFN | P-Channel | 20 V | 1.25 V | 150 °C | -55 °C | MLPAK33 | MOSFET (Metal Oxide) | 8 A 23.5 A | 1900 pF | 1.7 W 15 W | 29.1 nC | 2.5 V | 4.5 V | 12 V | Surface Mount | 20 mOhm |