High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.56 Ω@10V, DPAK, DTMOSⅤ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.56 Ω@10V, DPAK, DTMOSⅤ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.56 Ω@10V, DPAK, DTMOSⅤ
| Part | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Vgs (Max) | Drain to Source Voltage (Vdss) | FET Type | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature | Package / Case | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | DPAK | 10 V | 4 V | 30 V | 600 V | N-Channel | 7 A | MOSFET (Metal Oxide) | 380 pF | Surface Mount | 60 W | 14.5 nC | 150 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 560 mOhm |