High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.67 Ω@10V, IPAK, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.67 Ω@10V, IPAK, DTMOSⅣ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.67 Ω@10V, IPAK, DTMOSⅣ
| Part | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Technology | Package / Case | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | FET Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 670 mOhm | 570 pF | IPAK | 10 V | 150 °C | MOSFET (Metal Oxide) | TO-251-3 Stub Leads IPAK | 3.5 V | 16 nC | Through Hole | 80 W | 650 V | N-Channel | 30 V | 7.8 A |