TK1R4S04PB Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
12V - 300V MOSFETS, N-CH MOSFET, 40 V, 120 A, 0.00135 Ω@10V, DPAK+
| Part | FET Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Grade | Power Dissipation (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Technology | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Qualification | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | N-Channel | 120 A | 175 °C | 103 nC | 5500 pF | Automotive | 180 W | DPAK+ | 6 V 10 V | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Surface Mount | 40 V | 1.9 mOhm | 3 V | AEC-Q101 | 20 V |