Catalog
200V 4A 13ns, TO-277A, Ultra Fast Recovery Diode
Description
AI
RFN4RSM2S is a silicon epitaxial planar type ultra fast recovery diode featuring low VFand low switching loss. Ideal for general rectification applications.
Beta
⌘K
200V 4A 13ns, TO-277A, Ultra Fast Recovery Diode
200V 4A 13ns, TO-277A, Ultra Fast Recovery Diode
| Part | Reverse Recovery Time (trr) | Package / Case | Operating Temperature - Junction | Supplier Device Package | Mounting Type | Speed | Technology | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If [Max] | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 25 ns | TO-277 3-PowerDFN | 175 °C | TO-277A | Surface Mount | 200 mA 500 ns | Standard | 4 A | 1 µA | 930 mV | 200 V |