RFN4RSM2S Series

200V 4A 13ns, TO-277A, Ultra Fast Recovery Diode

Catalog

200V 4A 13ns, TO-277A, Ultra Fast Recovery Diode

Part	Package / Case	Operating Temperature - Junction	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Speed	Technology	Supplier Device Package
Rohm Semiconductor RFN4RSM2STL1	3-PowerDFN TO-277	175 °C	Surface Mount	930 mV	1 µA	200 V	25 ns	4 A	200 mA 500 ns	Standard	TO-277A

Catalog

200V 4A 13ns, TO-277A, Ultra Fast Recovery Diode

Key Features

• Low forward voltage, Low switching loss, High current overload capacity

Description

RFN4RSM2S is a silicon epitaxial planar type ultra fast recovery diode featuring low VFand low switching loss. Ideal for general rectification applications.