BSZ0902 Series

Manufacturer: INFINEON

Catalog

OPTIMOS™ N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 2.6 MOHM;

Part	Power Dissipation (Max)	Power Dissipation (Max)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
INFINEON BSZ0902NSATMA1	48 W	2.1 W	MOSFET (Metal Oxide)	150 °C	-55 °C	20 V	4.5 V 10 V	2.6 mOhm	Surface Mount	N-Channel	30 V	2 V	1700 pF	8-PowerTDFN	19 A 40 A	26 nC
INFINEON BSZ0902NSIATMA1			MOSFET (Metal Oxide)	150 °C	-55 °C	20 V	4.5 V 10 V	2.8 mOhm	Surface Mount	N-Channel	30 V	2 V		8-PowerTDFN	21 A 40 A		24 nC	1500 pF	2.5 W 48 W