TP90H050 Series
Manufacturer: Renesas Electronics Corporation
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GANFET N-CH 900V 34A TO247-3
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Package / Case | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) | Vgs(th) (Max) @ Id | Supplier Device Package | Drain to Source Voltage (Vdss) | Technology | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 980 pF | 17.5 nC | N-Channel | 119 W | -55 C | 150 °C | Through Hole | TO-247-3 | 34 A | 63 mOhm | 20 V | 4.4 V | TO-247-3 | 900 V | GaNFET (Cascode Gallium Nitride FET) | 10 V |
Renesas Electronics Corporation | 980 pF | 17.5 nC | N-Channel | 119 W | -55 C | 150 °C | Through Hole | TO-247-3 | 34 A | 63 mOhm | 20 V | 4.4 V | TO-247-3 | 900 V | GaNFET (Cascode Gallium Nitride FET) | 10 V |