SIHH27 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 600V 29A PPAK 8 X 8
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Technology | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 8-PowerTDFN | 10 V | MOSFET (Metal Oxide) | 100 mOhm | Surface Mount | 4 V | 600 V | PowerPAK® 8 x 8 | 2609 pF | N-Channel | 202 W | 135 nC | 30 V | 29 A |