NSF040120D7A1-Q Series

1200 V, 40 mΩ, N-channel SiC MOSFET for automotive applications

Catalog

1200 V, 40 mΩ, N-channel SiC MOSFET for automotive applications

Part	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Power Dissipation (Max)	Qualification	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Grade	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Nexperia USA Inc. NSF040120D7A1-QJ	22 V	-10 V	15 V 18 V	81 nC	1.2 kV	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Surface Mount	250 W	AEC-Q101	N-Channel	1980 pF	Automotive	175 °C	-55 °C	2.9 V	60 mOhm	54 A	TO-236-7

Catalog

1200 V, 40 mΩ, N-channel SiC MOSFET for automotive applications

Description

The NSF040120D7A1-Q is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSontemperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage automotive applications like E-vehicle onboard charger, DC-DC converterand auxiliary drives.