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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Qualification | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Supplier Device Package | Mounting Type | Technology | Grade | Operating Temperature [Max] | Operating Temperature [Min] | Vgs (Max) [Max] | FET Type | Package / Case | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 770 mA | AEC-Q101 | 380 mW | 30.3 pF | 1.5 V 4.5 V | 950 mV | 30 V | DFN0606-3 | Surface Mount | MOSFET (Metal Oxide) | Automotive | 150 °C | -55 °C | 8 V | N-Channel | 3-XFDFN | 670 mOhm | 0.4 nC |