FQP6N60C Series

Power MOSFET, N-Channel, QFET®, 600 V, 5.5 A, 2.0 Ω, TO-220

Catalog

Power MOSFET, N-Channel, QFET®, 600 V, 5.5 A, 2.0 Ω, TO-220

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [x]	Supplier Device Package	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
ON Semiconductor FQP6N60C	MOSFET (Metal Oxide)	5.5 A	600 V	4 V	30 V	2 Ohm	810 pF	-55 °C	150 °C	N-Channel	20 nC	TO-220-3	125 W	TO-220-3	10 V	Through Hole

Catalog

Power MOSFET, N-Channel, QFET®, 600 V, 5.5 A, 2.0 Ω, TO-220

Key Features

• 5.5A, 600V, RDS(on)= 2.0Ω @VGS= 10V

• Low gate charge (typical 16 nC)

• Low Crss (typical 7 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor.s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.