High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.56 Ω@10V, TO-220SIS, DTMOSⅤ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.56 Ω@10V, TO-220SIS, DTMOSⅤ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.56 Ω@10V, TO-220SIS, DTMOSⅤ
| Part | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Power Dissipation (Max) [Max] | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drain to Source Voltage (Vdss) | Supplier Device Package | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | Through Hole | 10 V | N-Channel | 30 W | TO-220-3 Full Pack | 560 mOhm | 30 V | 380 pF | MOSFET (Metal Oxide) | 650 V | TO-220SIS | 150 °C | 7 A | 4 V | 14.5 nC |