
Catalog
60 V, dual N-channel Trench MOSFET
Description
AI
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

60 V, dual N-channel Trench MOSFET
60 V, dual N-channel Trench MOSFET
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Technology | Configuration | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Grade | Drain to Source Voltage (Vdss) | Power - Max [Max] | Current - Continuous Drain (Id) @ 25°C | Qualification | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 150 °C | -55 °C | DFN1412-6 | 2.9 Ohm | 9 pF | 6-XFDFN Exposed Pad | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 315 pC | 1.5 V | Automotive | 60 V | 5 W 420 mW | 320 mA | AEC-Q101 | Surface Mount |