IRF6641 Series

Manufacturer: INFINEON

Catalog

IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 59.9 MOHM;

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
INFINEON IRF6641TRPBF	10 V	N-Channel	48 nC	MOSFET (Metal Oxide)	DIRECTFET™ MZ	2.8 W 89 W	4.6 A 26 A	Surface Mount	4.9 V	DirectFET™ Isometric MZ	59.9 mOhm	20 V	2290 pF	200 V	-40 °C	150 °C
INFINEON IRF6641TRPBF	10 V	N-Channel	48 nC	MOSFET (Metal Oxide)	DIRECTFET™ MZ	2.8 W 89 W	4.6 A 26 A	Surface Mount	4.9 V	DirectFET™ Isometric MZ	59.9 mOhm	20 V	2290 pF	200 V	-40 °C	150 °C