CSD18537NQ5A Series

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 13 mOhm

Catalog

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 13 mOhm

Part	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Texas Instruments CSD18537NQ5A	Surface Mount	8-PowerTDFN	50 A	75 W	3.2 W	13 mOhm	60 V	MOSFET (Metal Oxide)	-55 °C	150 °C	3.5 V	20 V	6 V 10 V	8-VSONP (5x6)	1480 pF	N-Channel	18 nC
Texas Instruments CSD18537NQ5AT	Surface Mount	8-PowerTDFN	50 A	75 W	3.2 W	13 mOhm	60 V	MOSFET (Metal Oxide)	-55 °C	150 °C	3.5 V	20 V	6 V 10 V	8-VSONP (5x6)	1480 pF	N-Channel	18 nC
Texas Instruments CSD18537NKCS	Through Hole	TO-220-3	50 A		94 W		60 V	MOSFET (Metal Oxide)	-55 °C	150 °C	3.5 V	20 V	6 V 10 V	TO-220-3	1480 pF	N-Channel	18 nC

Catalog

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 13 mOhm

Key Features

• Ultra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5 mm × 6 mm Plastic PackageUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5 mm × 6 mm Plastic Package

Description

This 10 mΩ, 60 V, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 10 mΩ, 60 V, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.