High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 1.0 Ω@10V, TO-220SIS, π-MOSⅨ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 1.0 Ω@10V, TO-220SIS, π-MOSⅨ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 1.0 Ω@10V, TO-220SIS, π-MOSⅨ
| Part | Power Dissipation (Max) | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Package / Case | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Vgs (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 40 W | 150 °C | 10 V | 600 V | 24 nC | MOSFET (Metal Oxide) | 7.5 A | TO-220-3 Full Pack | Through Hole | 890 pF | 4 V | 30 V | 1 Ohm | TO-220SIS | N-Channel |