NTBG160N120SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max) [Min]	Vgs (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs
ON Semiconductor NTBG160N120SC1	678 pF	33.8 nC	4.3 V	Surface Mount	1200 V	-15 V	25 V	-55 °C	175 ░C	N-Channel	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	136 W	19.5 A	D2PAK-7	224 mOhm

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L

Key Features

• Ultra Low Gate Charge

• High Speed Switching and Low Capacitance

• 1200V rated

• 100% Avalanche Tested

• Devices are RoHS Compliant

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.